Publications and Patents:

Publications and Book chapters

Nature Materials

Nature Materials, 21(5): 518-525 (2022) : “Multiscale hierarchical structures from a nanocluster mesophase” H. Han, S. Kallakuri, Y. Yao, C. B. Williamson, D. R. Nevers, B. H. Savitzky, R. S. Skye, M. Xu, O. Voznyy, J. Dshemuchadse, L. F. Kourkoutis, S. J. Weinstein, T. Hanrath, R. D. Robinson

Nature Communications

Nature Communications, 9(1): 4282 (2018) : “DNA-engineered micromotors powered by metal nanoparticles for motion-based cellphone diagnostics” M. S. Draz, K. M. Kochehbyoki, A. Vasan, D. Battalapalli, A. Sreeram, M. K. Kanakasabapathy, S. Kallakuri, A. Tsibris, D. R. Kuritzkes, H. Shafiee

ACS Nano

ACS Nano, 12(6): 5709-5718 (2018) : “Motion-based immunological detection of Zika Virus using Pt-nanomotors and a cellphone” M. S. Draz, N. K. Lakshminaraasimulu, S. Krishnakumar, D. Battalapalli, A. Vasan, M. K. Kanakasabapathy, A. Sreeram, S. Kallakuri, P. Thirumalaraju, Y. Li, S. Hua, X. G. Yu, D. R. Kuritzkes, H. Shafiee

CRC Press / Taylor & Francis

Functionalized engineering materials & their applications, 1(1):117-124 (2016) : “Synthesis and characterization of templated Polyanilines: A new class of polymeric materials” J. Avusula, S. Kallakuri, J. Subbalakshmi

IIChE Conference Proceedings

ChemCON-2014, Indian Institute of Chemical Engineers (IIChE): “Analysis of wood pulp after Kraft cooking and bleaching” R. B. Adusumalli, B. Chakravarthy, S. Kallakuri, S. Dinda

Patents

US11956978B2

US11956978B2 | Techniques and device structure based upon directional seeding and selective deposition (April 2024) M. A. Zeeshan, K. Chan, S. Kallakuri, S. Varghese. This IP describes a process to selectively, angularly deposit metals & dielectrics on SiNx vs SiOx vs Si, the three most common substrates in semiconductor microchip fabrication.

US20240040808A1

US20240040808A1 | Techniques and device structure based upon directional seeding and selective deposition (February 2024) S. Varghese, M. A. Zeeshan, S. Kallakuri, K. Chan. Split patent encompassing parts of the above project idea.

US11749564B2

US11749564B2 | Techniques for void-free material depositions (September 2023) M. A. Zeeshan, K. Chan, S. Kallakuri, S. Varghese, J. Hautala. This IP covers a foundational way to void-free deposit metal for Buried Wordline fill application (BWL) in leading-node transistors since voids raise chip operating resistance.

US11404314B2

US11404314B2 | Metal line patterning (August 2022) S. Varghese, M. A. Zeeshan, S. Kallakuri, K. Chan. This method describes a process-flow for selective fin patterning through deposition/etch steps using Plasma-enhanced CVD and/or ALD for transistor Wordline and Bitline application.

US20220100078A1

US20220100078A1 | Devices and methods for variable etch depths (Pending) M. A. Zeeshan, R. Bandy, P. F. Kurunczi, S. Kallakuri, T. Soldi, J. C. Olson. This work covers a process-flow crucial to plasma etch processing of waveguides and gratings on optical glass (Various glass types) for Augmented Reality.

US20220119955A1

US20220119955A1 | Techniques for variable deposition profiles (Abandoned by us) M. A. Zeeshan, S. Kallakuri, J. C. Olson. This IP modulates refractive index for AR applications. Abandoned it and withdrew it midway during review (self) due to insufficient commercial value outlook.